Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
Nakao, H. (Autor:in) / Mikami, H. (Autor:in) / Yano, H. (Autor:in) / Hatayama, T. (Autor:in) / Uraoka, Y. (Autor:in) / Fuyuki, T. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
Silicon Carbide and Related Materials - 2005 ; 1293-1296
MATERIALS SCIENCE FORUM ; 527/529
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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