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The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
Fujisawa, H. (Autor:in) / Tsuji, T. (Autor:in) / Nishiura, M. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
Silicon Carbide and Related Materials - 2005 ; 1297-1300
MATERIALS SCIENCE FORUM ; 527/529
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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