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Lower-Temperature Epitaxial Growth of 4H-SiC Using CH~3Cl Carbon Gas Precursor
Lower-Temperature Epitaxial Growth of 4H-SiC Using CH~3Cl Carbon Gas Precursor
Lower-Temperature Epitaxial Growth of 4H-SiC Using CH~3Cl Carbon Gas Precursor
Koshka, Y. (Autor:in) / Lin, H. D. (Autor:in) / Melnychuk, G. (Autor:in) / Wood, C. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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