Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Lower-Temperature Epitaxial Growth of 4H-SiC Using CH~3Cl Carbon Gas Precursor

    New search for: Koshka, Y.
    New search for: Lin, H. D.
    New search for: Melnychuk, G.
    New search for: Wood, C.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Lower-Temperature Epitaxial Growth of 4H-SiC Using CH~3Cl Carbon Gas Precursor

    New search for: Koshka, Y.
    New search for: Lin, H. D.
    New search for: Melnychuk, G.
    New search for: Wood, C.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Lower-Temperature Epitaxial Growth of 4H-SiC Using CH~3Cl Carbon Gas Precursor

    New search for: Koshka, Y.
    New search for: Lin, H. D.
    New search for: Melnychuk, G.
    New search for: Wood, C.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Lower-Temperature Epitaxial Growth of 4H-SiC Using CH~3Cl Carbon Gas Precursor

    Contributors:

    Koshka, Y. (author) / Lin, H. D. (author) / Melnychuk, G. (author) / Wood, C. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

    Published in:

    Silicon Carbide and Related Materials - 2005 ; 167-170

    MATERIALS SCIENCE FORUM ; 527/529

    Publication date:

    2006-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Use of SiCl~4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

    Kotamraju, S.P. / Krishnan, B. / Melnychuk, G. et al. | British Library Online Contents | 2010

    SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

    Leone, S. / Mauceri, M. / Pistone, G. et al. | British Library Online Contents | 2006

    Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as Precursor

    Henry, A. / Janzen, E. | British Library Online Contents | 2005

    Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth

    Das, H. / Melnychuk, G. / Koshka, Y. | British Library Online Contents | 2009

    Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor

    Wang, R. / Bhat, I. / Chow, P. | British Library Online Contents | 2002

    Back to top