Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Thermal oxidation temperature dependence of 4H-SiC MOS interface
Thermal oxidation temperature dependence of 4H-SiC MOS interface
Thermal oxidation temperature dependence of 4H-SiC MOS interface
Kurimoto, H. (Autor:in) / Shibata, K. (Autor:in) / Kimura, C. (Autor:in) / Aoki, H. (Autor:in) / Sugino, T. (Autor:in)
APPLIED SURFACE SCIENCE ; 253 ; 2416-2420
01.01.2006
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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