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Dependence of SiO2/Si interface structure on low-temperature oxidation process
Dependence of SiO2/Si interface structure on low-temperature oxidation process
Dependence of SiO2/Si interface structure on low-temperature oxidation process
Hattori, T. (Autor:in) / Azuma, K. (Autor:in) / Nakata, Y. (Autor:in) / Shioji, M. (Autor:in) / Shiraishi, T. (Autor:in) / Yoshida, T. (Autor:in) / Takahashi, K. (Autor:in) / Nohira, H. (Autor:in) / Takata, Y. (Autor:in) / Shin, S. (Autor:in)
APPLIED SURFACE SCIENCE ; 234 ; 197-201
01.01.2004
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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