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Thermal oxidation temperature dependence of 4H-SiC MOS interface

Kurimoto, H. / Shibata, K. / Kimura, C. / Aoki, H. / Sugino, T.

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Thermal oxidation temperature dependence of 4H-SiC MOS interface

Kurimoto, H. / Shibata, K. / Kimura, C. / Aoki, H. / Sugino, T.

Thermal oxidation temperature dependence of 4H-SiC MOS interface

Kurimoto, H. / Shibata, K. / Kimura, C. / Aoki, H. / Sugino, T.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

Thermal oxidation temperature dependence of 4H-SiC MOS interface

Contributors:

Kurimoto, H. (author) / Shibata, K. (author) / Kimura, C. (author) / Aoki, H. (author) / Sugino, T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 2416-2420

Publication date:

2006-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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