Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Atomic scale simulations of arsenic-vacancy complexes in germanium and silicon
Atomic scale simulations of arsenic-vacancy complexes in germanium and silicon
Atomic scale simulations of arsenic-vacancy complexes in germanium and silicon
Chroneos, A. (Autor:in) / Grimes, R. W. (Autor:in) / Tsamis, C. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 536-540
01.01.2006
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Vacancy-hydrogen complexes in germanium
| British Library Online Contents | 1999
Atomic transport in germanium and the mechanism of arsenic diffusion
| British Library Online Contents | 2006
Quantum atomistic simulations of silicon and germanium
| British Library Online Contents | 2001
Nitrogen-Vacancy Complexes in SiC - Final Annealing Products of the Silicon Vacancy?
| British Library Online Contents | 2003
Positron probing of point V-group impurity-vacancy complexes in g-irradiated germanium
| British Library Online Contents | 2006