Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates
Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates
Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates
Wietler, T. F. (Autor:in) / Bugiel, E. (Autor:in) / Hofmann, K. R. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 659-663
01.01.2006
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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