A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates
Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates
Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates
Wietler, T. F. (author) / Bugiel, E. (author) / Hofmann, K. R. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 659-663
2006-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon
| British Library Online Contents | 2008
Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxy
| British Library Online Contents | 2014
Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxy
| British Library Online Contents | 2014
Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates
| British Library Online Contents | 1998
Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxy
| British Library Online Contents | 2014