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Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon
Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon
Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon
Wietler, T. F. (Autor:in) / Bugiel, E. (Autor:in) / Hofmann, K. R. (Autor:in)
APPLIED SURFACE SCIENCE ; 255 ; 778-780
01.01.2008
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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