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Grain Size and Orientation Control in Lead-Free (Bi,La)~4Ti~3O~1~2 Thin Film Deposited by Spin-On Method for High Density FeRAM Device
Grain Size and Orientation Control in Lead-Free (Bi,La)~4Ti~3O~1~2 Thin Film Deposited by Spin-On Method for High Density FeRAM Device
Grain Size and Orientation Control in Lead-Free (Bi,La)~4Ti~3O~1~2 Thin Film Deposited by Spin-On Method for High Density FeRAM Device
Kim, Y. M. (Autor:in) / Jang, G. E. (Autor:in) / Kim, N. K. (Autor:in) / Yeom, S. J. (Autor:in) / Kweon, S. Y. (Autor:in) / Kim, H. / Hojo, J. / Lee, S. W.
01.01.2007
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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