Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K

Korucu, D. / Efeoglu, H. / Turut, A. et al. | British Library Online Contents | 2012

The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

Dokme, I. / Altindal, S. / Bulbul, M. M. | British Library Online Contents | 2006

Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes

Dogan, H. / Korkut, H. / Yldrm, N. et al. | British Library Online Contents | 2007

Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height

Kinoshita, A. / Ohyanagi, T. / Yatsuo, T. et al. | British Library Online Contents | 2010

Double Gaussian distribution of barrier height for FeCrNiC alloy Schottky contacts on p-Si substrates

Bestas, A. N. / Yazici, S. / Aktas, F. et al. | British Library Online Contents | 2014