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Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC

Steeds, J. W.

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Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC

Steeds, J. W.

Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC

Steeds, J. W.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

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Dokumentinformationen

Titel:

Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC

Beteiligte:

Steeds, J. W. (Autor:in) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.

Erschienen in:

Silicon Carbide and Related Materials 2006 ; 313-318

MATERIALS SCIENCE FORUM ; 556/557

Erscheinungsdatum:

01.01.2007

Format / Umfang:

6 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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