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Photoluminescence studies of defects created in nitrogen-doped silicon during annealing under enhanced pressure
Photoluminescence studies of defects created in nitrogen-doped silicon during annealing under enhanced pressure
Photoluminescence studies of defects created in nitrogen-doped silicon during annealing under enhanced pressure
Surma, B. (Autor:in) / Misiuk, A. (Autor:in) / Wnuk, A. (Autor:in) / Bukowski, A. (Autor:in) / Rzodkiewicz, W. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 405-409
01.01.2004
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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