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Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films
Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films
Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films
Chang, Y. M. (Autor:in) / Dai, C. L. (Autor:in) / Cheng, T. C. (Autor:in) / Hsu, C. W. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 3105-3109
01.01.2008
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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