Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition
Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition
Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition
Marcos, G. (Autor:in) / Rhallabi, A. (Autor:in) / Ranson, P. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 3576-3584
01.01.2008
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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