A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition
Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition
Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition
Marcos, G. (author) / Rhallabi, A. (author) / Ranson, P. (author)
APPLIED SURFACE SCIENCE ; 254 ; 3576-3584
2008-01-01
9 pages
Article (Journal)
English
DDC:
621.35
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