Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer: Fid-Bau Portal

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

Song, J. O. / Kim, K. K. / Kim, H. / Kim, Y. H. / Hong, H. G. / Na, H. / Seong, T. Y.

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Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

Song, J. O. / Kim, K. K. / Kim, H. / Kim, Y. H. / Hong, H. G. / Na, H. / Seong, T. Y.

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

Song, J. O. / Kim, K. K. / Kim, H. / Kim, Y. H. / Hong, H. G. / Na, H. / Seong, T. Y.

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Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

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Ähnliche Titel

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Titel:

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

Beteiligte:

Song, J. O. (Autor:in) / Kim, K. K. (Autor:in) / Kim, H. (Autor:in) / Kim, Y. H. (Autor:in) / Hong, H. G. (Autor:in) / Na, H. (Autor:in) / Seong, T. Y. (Autor:in)

Erschienen in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 10 ; 211-214

Erscheinungsdatum:

01.01.2007

Format / Umfang:

4 pages

ISSN:

1369-8001

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.38152

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