Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer: Fid-Bau Portal

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

Song, J. O. / Kim, K. K. / Kim, H. / Kim, Y. H. / Hong, H. G. / Na, H. / Seong, T. Y.

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Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

Song, J. O. / Kim, K. K. / Kim, H. / Kim, Y. H. / Hong, H. G. / Na, H. / Seong, T. Y.

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

Song, J. O. / Kim, K. K. / Kim, H. / Kim, Y. H. / Hong, H. G. / Na, H. / Seong, T. Y.

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Order at Subito €

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Title:

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayer

Contributors:

Song, J. O. (author) / Kim, K. K. (author) / Kim, H. (author) / Kim, Y. H. (author) / Hong, H. G. (author) / Na, H. (author) / Seong, T. Y. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 10 ; 211-214

Publication date:

2007-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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