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Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model

Kinoshita, K. / Noshiro, H. / Yoshida, C. / Sato, Y. / Aoki, M. / Sugiyama, Y.

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Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model

Kinoshita, K. / Noshiro, H. / Yoshida, C. / Sato, Y. / Aoki, M. / Sugiyama, Y.

Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model

Kinoshita, K. / Noshiro, H. / Yoshida, C. / Sato, Y. / Aoki, M. / Sugiyama, Y.

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Titel:

Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model

Beteiligte:

Kinoshita, K. (Autor:in) / Noshiro, H. (Autor:in) / Yoshida, C. (Autor:in) / Sato, Y. (Autor:in) / Aoki, M. (Autor:in) / Sugiyama, Y. (Autor:in)

Erschienen in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 23 ; 812-818

Erscheinungsdatum:

01.01.2008

Format / Umfang:

7 pages

ISSN:

0884-2914

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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