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    Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model

    New search for: Kinoshita, K.
    New search for: Noshiro, H.
    New search for: Yoshida, C.
    New search for: Sato, Y.
    New search for: Aoki, M.
    New search for: Sugiyama, Y.

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    Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model

    New search for: Kinoshita, K.
    New search for: Noshiro, H.
    New search for: Yoshida, C.
    New search for: Sato, Y.
    New search for: Aoki, M.
    New search for: Sugiyama, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model

    New search for: Kinoshita, K.
    New search for: Noshiro, H.
    New search for: Yoshida, C.
    New search for: Sato, Y.
    New search for: Aoki, M.
    New search for: Sugiyama, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model

    Contributors:

    Kinoshita, K. (author) / Noshiro, H. (author) / Yoshida, C. (author) / Sato, Y. (author) / Aoki, M. (author) / Sugiyama, Y. (author)

    Published in:

    JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 23 ; 812-818

    Publication date:

    2008-01-01

    Size:

    7 pages

    ISSN:

    0884-2914

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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