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Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing
Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing
Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing
Chen, P. S. (Autor:in) / Lee, S. W. (Autor:in) / Lee, M. H. (Autor:in) / Liu, C. W. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 6076-6080
01.01.2008
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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