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Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing
Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing
Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing
Chen, P. S. (author) / Lee, S. W. (author) / Lee, M. H. (author) / Liu, C. W. (author)
APPLIED SURFACE SCIENCE ; 254 ; 6076-6080
2008-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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