Atomic-layer etching of Ge using an ultraclean ECR plasma

Sugiyama, T. / Matsuura, T. / Murota, J. | British Library Online Contents | 1997

Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

Jeong, Y. / Sakuraba, M. / Murota, J. | British Library Online Contents | 2005

Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition

Tanno, H. / Sakuraba, M. / Tillack, B. et al. | British Library Online Contents | 2008

Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition

Shimamune, Y. / Sakuraba, M. / Matsuura, T. et al. | British Library Online Contents | 2000

W delta doping in Si(1 0 0) using ultraclean low-pressure CVD

Kanaya, T. / Sakuraba, M. / Murota, J. | British Library Online Contents | 2003