Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system: Fid-Bau Portal

Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system

Yokogawa, T. / Ishibashi, K. / Sakuraba, M. / Murota, J. / Inokuchi, Y. / Kunii, Y. / Kurokawa, H.

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Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system

Yokogawa, T. / Ishibashi, K. / Sakuraba, M. / Murota, J. / Inokuchi, Y. / Kunii, Y. / Kurokawa, H.

Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system

Yokogawa, T. / Ishibashi, K. / Sakuraba, M. / Murota, J. / Inokuchi, Y. / Kunii, Y. / Kurokawa, H.

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Document information

Title:

Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system

Contributors:

Yokogawa, T. (author) / Ishibashi, K. (author) / Sakuraba, M. (author) / Murota, J. (author) / Inokuchi, Y. (author) / Kunii, Y. (author) / Kurokawa, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6090-6093

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Tanno, H. / Sakuraba, M. / Tillack, B. et al. | British Library Online Contents | 2008

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