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Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1-xGex/Si(100) heterostructure
Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1-xGex/Si(100) heterostructure
Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1-xGex/Si(100) heterostructure
Seo, T. (Autor:in) / Sakuraba, M. (Autor:in) / Murota, J. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 6265-6267
01.01.2008
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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