Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1-xGex/Si(100) heterostructure: Fid-Bau Portal

Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1-xGex/Si(100) heterostructure

Seo, T. / Sakuraba, M. / Murota, J.

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Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1-xGex/Si(100) heterostructure

Seo, T. / Sakuraba, M. / Murota, J.

Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1-xGex/Si(100) heterostructure

Seo, T. / Sakuraba, M. / Murota, J.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1-xGex/Si(100) heterostructure

Contributors:

Seo, T. (author) / Sakuraba, M. (author) / Murota, J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6265-6267

Publication date:

2008-01-01

Size:

3 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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