Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Charge transport diagnosis by: I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers
Charge transport diagnosis by: I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers
Charge transport diagnosis by: I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers
Wolkenberg, A. (Autor:in) / Przeslawski, T. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 6736-6741
01.01.2008
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Electrical charge transport of n-InAs epitaxial films on GaAs
| British Library Online Contents | 2002
The rapid amorphisation of In0.53Ga0.47As relative to both InAs and GaAs
| British Library Online Contents | 2004
Lasers with d InAs layers in GaAs
| British Library Online Contents | 2002
| British Library Online Contents | 2001
Defects in Thick Epitaxial Gaas Layers
| British Library Online Contents | 1997