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    Charge transport diagnosis by: I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers

    New search for: Wolkenberg, A.
    New search for: Przeslawski, T.

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    Charge transport diagnosis by: I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers

    New search for: Wolkenberg, A.
    New search for: Przeslawski, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Charge transport diagnosis by: I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers

    New search for: Wolkenberg, A.
    New search for: Przeslawski, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Charge transport diagnosis by: I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers

    Contributors:

    Wolkenberg, A. (author) / Przeslawski, T. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 254 ; 6736-6741

    Publication date:

    2008-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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