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High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers
High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers
High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers
Radamson, H. H. (Autor:in) / Kolahdouz, M. (Autor:in) / Ghandi, R. (Autor:in) / Ostling, M. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 106-109
01.01.2008
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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