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    High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    New search for: Radamson, H. H.
    New search for: Kolahdouz, M.
    New search for: Ghandi, R.
    New search for: Ostling, M.

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    High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    New search for: Radamson, H. H.
    New search for: Kolahdouz, M.
    New search for: Ghandi, R.
    New search for: Ostling, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    New search for: Radamson, H. H.
    New search for: Kolahdouz, M.
    New search for: Ghandi, R.
    New search for: Ostling, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Contributors:

    Radamson, H. H. (author) / Kolahdouz, M. (author) / Ghandi, R. (author) / Ostling, M. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 106-109

    Publication date:

    2008-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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