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Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry
Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry
Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry
Yamamoto, T. (Autor:in) / Hijikata, Y. (Autor:in) / Yaguchi, H. (Autor:in) / Yoshida, S. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 667-670
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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