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    Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

    New search for: Yamamoto, T.
    New search for: Hijikata, Y.
    New search for: Yaguchi, H.
    New search for: Yoshida, S.

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    Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

    New search for: Yamamoto, T.
    New search for: Hijikata, Y.
    New search for: Yaguchi, H.
    New search for: Yoshida, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

    New search for: Yamamoto, T.
    New search for: Hijikata, Y.
    New search for: Yaguchi, H.
    New search for: Yoshida, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

    Contributors:

    Yamamoto, T. (author) / Hijikata, Y. (author) / Yaguchi, H. (author) / Yoshida, S. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 600/603 ; 667-670

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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