Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
4H-SiC p-Channel MOSFETs with Epi-Channel Structure
4H-SiC p-Channel MOSFETs with Epi-Channel Structure
4H-SiC p-Channel MOSFETs with Epi-Channel Structure
Okamoto, M. (Autor:in) / Yatsuo, T. (Autor:in) / Fukuda, K. (Autor:in) / Okumura, H. (Autor:in) / Arai, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 711-714
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)
British Library Online Contents | 2004
|British Library Online Contents | 2000
|Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure
British Library Online Contents | 2002
|SiC Epi-Channel Lateral MOSFETs
British Library Online Contents | 2014
|High Channel Mobility 4H-SiC MOSFETs
British Library Online Contents | 2006
|