Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration

Senzaki, J. / Shimozato, A. / Fukuda, K. et al. | British Library Online Contents | 2009

A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer

Senzaki, J. / Goto, M. / Kojima, K. et al. | British Library Online Contents | 2004

Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer

Senzaki, J. / Kojima, K. / Kato, T. et al. | British Library Online Contents | 2005

Effect of POCl~3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC

Morishita, R. / Yano, H. / Okamoto, D. et al. | British Library Online Contents | 2012

Gate-Area Dependence of SiC Thermal Oxides Reliability

Senzaki, J. / Shimozato, A. / Okamoto, M. et al. | British Library Online Contents | 2009