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Effect of POCl~3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC
Effect of POCl~3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC
Effect of POCl~3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC
Morishita, R. (Autor:in) / Yano, H. (Autor:in) / Okamoto, D. (Autor:in) / Hatayama, T. (Autor:in) / Fuyuki, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 739-742
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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