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A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
Senzaki, J. (Autor:in) / Goto, M. (Autor:in) / Kojima, K. (Autor:in) / Yamabe, K. (Autor:in) / Fukuda, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 1269-1274
01.01.2004
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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