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Gate-Area Dependence of SiC Thermal Oxides Reliability
Gate-Area Dependence of SiC Thermal Oxides Reliability
Gate-Area Dependence of SiC Thermal Oxides Reliability
Senzaki, J. (Autor:in) / Shimozato, A. (Autor:in) / Okamoto, M. (Autor:in) / Kojima, K. (Autor:in) / Fukuda, K. (Autor:in) / Okumura, H. (Autor:in) / Arai, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 787-790
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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