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SiC Lateral Trench JFET for Harsh-Environment Wireless Systems
SiC Lateral Trench JFET for Harsh-Environment Wireless Systems
SiC Lateral Trench JFET for Harsh-Environment Wireless Systems
Sankin, I. (Autor:in) / Bondarenko, V. (Autor:in) / Sheridan, D.C. (Autor:in) / Mazzola, M.S. (Autor:in) / Casady, J.B. (Autor:in) / Fraley, J. (Autor:in) / Schupbach, M. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 1087-1090
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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British Library Online Contents | 2002
|Demonstration of SiC Vertical Trench JFET Reliability
British Library Online Contents | 2012
|Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET
British Library Online Contents | 2013
|A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices
British Library Online Contents | 2011
|TRANSPORTABLE, RECONFIGURABLE HARSH ENVIRONMENT WORKSPACE
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