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Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
Tadjer, M.J. (Autor:in) / Hobart, K.D. (Autor:in) / Imhoff, E.A. (Autor:in) / Kub, F.J. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 1147-1150
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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