Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High Temperature, High Current, 4H-SiC Accu-DMOSFET
High Temperature, High Current, 4H-SiC Accu-DMOSFET
High Temperature, High Current, 4H-SiC Accu-DMOSFET
Singh, R. (Autor:in) / Ryu, S.-H. (Autor:in) / Palmour, J. W. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1271-1274
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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Online Contents | 2012
Implications of Threshold-Voltage Instability on SiC DMOSFET Operation
| British Library Online Contents | 2009
Simulation and Optimization of 4H-SiC DMOSFET Power Transistors
| British Library Online Contents | 2013
Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
| British Library Online Contents | 2009
Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics
| British Library Online Contents | 2010