Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
Choi, Y.H. (Autor:in) / Lim, J.Y. (Autor:in) / Cho, K.H. (Autor:in) / Ji, I.H. (Autor:in) / Han, M.K. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 1337-1340
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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