A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
Choi, Y.H. (author) / Lim, J.Y. (author) / Cho, K.H. (author) / Ji, I.H. (author) / Han, M.K. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 1337-1340
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Analysis of the abnormal resistance in AlGaN/GaN heterostructure's ohmic contact tests
| British Library Online Contents | 2007
Characterization of Ohmic contacts on GaN/AlGaN heterostructures
| British Library Online Contents | 2006
Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN
| British Library Online Contents | 2007
GaN/AlGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors
| British Library Online Contents | 1997
Refractive index changes in AlGaN/GaN heterostructure field-effect transistors
| British Library Online Contents | 2008