Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure: Fid-Bau Portal

Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure

Sugie, R. / Yoshikawa, M. / Harada, S. / Namikawa, Y.

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Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure

Sugie, R. / Yoshikawa, M. / Harada, S. / Namikawa, Y.

Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure

Sugie, R. / Yoshikawa, M. / Harada, S. / Namikawa, Y.

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Check availability in my library

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Document information

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Document information

Title:

Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure

Contributors:

Sugie, R. (author) / Yoshikawa, M. (author) / Harada, S. (author) / Namikawa, Y. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 353-356

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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