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Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
Reshanov, S.A. (Autor:in) / Pensl, G. (Autor:in) / Danno, K. (Autor:in) / Kimoto, T. (Autor:in) / Hishiki, S. (Autor:in) / Ohshima, T. (Autor:in) / Yan, F. (Autor:in) / Devaty, R.P. (Autor:in) / Choyke, W.J. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 417-420
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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