Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The role of deep level traps in barrier height of 4H-SiC Schottky diode
The role of deep level traps in barrier height of 4H-SiC Schottky diode
The role of deep level traps in barrier height of 4H-SiC Schottky diode
Zaremba, G. (Autor:in) / Adamus, Z. (Autor:in) / Jung, W. (Autor:in) / Kaminska, E. (Autor:in) / Borysiewicz, M. A. (Autor:in) / Korwin-Mikke, K. (Autor:in)
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Temperature-dependent barrier height in CdSe Schottky diode
British Library Online Contents | 2010
|Phase transition related barrier height in Ga-Si Schottky diode
British Library Online Contents | 1997
|British Library Online Contents | 1995
|Schottky barrier height at the Au/porous silicon interface
British Library Online Contents | 1998
|British Library Online Contents | 2006
|