Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode
Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode
Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode
Kang, I.H. (Autor:in) / Bahng, W. (Autor:in) / Joo, S.J. (Autor:in) / Kim, S.C. (Autor:in) / Kim, N.K. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 663-666
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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