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Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
Kato, M. (Autor:in) / Nanen, Y. (Autor:in) / Suda, J. (Autor:in) / Kimoto, T. (Autor:in) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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