Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy

Leroux, M. / Beaumont, B. / Grandjean, N. et al. | British Library Online Contents | 1997

Electrical characteristics of GaIn(As)Sb layers grown by metal organic vapor phase epitaxy

Giani, A. / Pascal-Delannoy, F. / Podlecki, J. et al. | British Library Online Contents | 1996

High-reflective 1.5 m GaInAsP/InP Bragg reflectors grown by metal organic vapor phase epitaxy

Streubel, K. / Wallin, J. / Zhu, L. et al. | British Library Online Contents | 1994

Oxynitride mediated epitaxy of gallium nitride on silicon(111) substrates in a merged hydride/metal-organic vapor phase epitaxy system

Mastro, M. A. / Kryliouk, O. M. / Anderson, T. J. | British Library Online Contents | 2006

Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Hoglund, L. / Petrini, E. / Asplund, C. et al. | British Library Online Contents | 2006